Abstract
Dry etching of copper interconnect lines in a chlorine-based plasma has been investigated. Copper dry etching was carried out in a modified diode-type reactive ion etch (RIE) system and in an inductively coupled plasma (ICP) etch system. The ICP system offers a significant increase in copper etch rate compared with the low-efficiency RIE system while maintaining excellent pattern transfer accuracy. A number of fundamental issues in high quality and high throughput copper dry etching will be discussed. Electrical characterization of patterned copper lines with line width as small as 0.25 μm indicates low electrical resistivity and good electromigration performance.
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