Abstract
A thermally curable poly(dimethylsiloxane)-based nanoimprinting resist allows an extremely fast replication (few seconds) of 70 nm line-width structures at moderate temperatures and low pressures (see figure). The high silicon content of this material also makes it highly resistant to reactive-ion etching, allowing the imprinted pattern to be transferred into SiO2 without any additional hard etching mask. The imprinted structure can be used as a stamp directly.
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