Abstract
High threshold voltage uniformity p/sup +/-GaInAs/n-AlInAs/GaInAs millimeter-wave junction-modulated HEMT's are reported. Devices with 0.2 /spl mu/m gatelength exhibit a standard deviation in threshold voltage of 13.7 mV across a 1/spl times/1.5 in/sup 2/ wafer. The uniformity is achieved in devices which exhibit high DC transconductance (520 mS/mm), high unity-gain cut-off frequencies: f/sub T/ (105 GHz) and f/sub max/ (exceeding 200 GHz), and low minimum noise figure (0.45 dB) with high associated gain (14.5 dB) at 12 GHz.
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