High thermosensitivity of silicon nanowires induced by amorphization

Abstract

In this work, we demonstrate highly thermosensitive silicon nanowires (SiNWs) for thermal-sensing applications. Crystalline Si was amorphized by Focused Ion Beam in the fabrication process of the SiNWs, and subsequently recrystallized by a thermal annealing process to improve their electrical conductivity. A temperature coefficient of resistance (TCR) from −8000ppm/K to −12,000ppm/K was measured for the SiNWs. This large negative TCR is attributed to the boundary potential barrier of 110meV between silicon crystallites in the poly crystalline SiNWs.