Abstract
The composition-dependent thermoelectric properties of lead telluride(PbTe) doped with bismuth telluride (Bi2Te3), antimonytelluride (Sb2Te3) and (BiSb)2Te3 have beenstudied at room temperature. All the samples exhibit small thermalconductivity. The figures of merit, 7.63, 1.03 and 8.97×10−4,have been obtained in PbTe with these dopants, respectively. Thesevalues are several times higher than those of PbTe containing otherdopants with small grain sizes. The high thermoelectric performance isexplained by electronic topological transition induced by alloying. Theresults indicate that these dopants are effective to enhance thethermoelectric performance of PbTe.
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