Abstract
Thermoelectric properties of new Bi- and Sb-doped Mg2Si0.55Sn0.4Ge0.05 compounds prepared by powder methods were studied in the temperature range 300–823 K. The materials exhibited compositional inhomogeneites consisting of Sn-rich and Sn-poor areas. Doping with Bi or Sb had a very strong influence on the thermoelectric properties. A high figure of merit was obtained, with a value ∼1.4 for Bi members and ∼1.2 for Sb members at high temperatures. These values are the highest reported on this system.
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