Abstract
Lanthanum doping of the high-temperature p-type thermoelectric material Yb14MnSb11 enhances the figure of merit (zT) through carrier concentration tuning. This is achieved by substituting La3+ on the Yb2+ site to reduce the free hole concentration as expected from the change in valence. The high-temperature transport properties (Seebeck coefficient, electrical resistivity, Hall mobility, and thermal conductivity) of Yb13.6La0.4MnSb11 are explained by the change in carrier concentration using a simple rigid parabolic band model, similar to that found in Yb14Mn1−xAlxSb11. Together, use of these two dopant sites enables the partial decoupling of electronic and structural properties in Yb14MnSb11-based materials.
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