Abstract
Thermally induced index variations as high as 0.1 were recorded in InP/GaAsInP 1.15 /InP waveguide Schottky diodes for 1 W/mm electrical power per electrode length. Pulse response characterisation showed almost 700 ns response time for 1 ?s square pulses under forward biased conditions (I = 20 mA, V = 300 mV).
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