Abstract

The dc, flicker noise, power, and temperature dependence of AlGaAs/InGaAs enhancement-mode pseudomorphic high electron mobility transistors (E-pHEMTs) were investigated using iridium (Ir) buried-gate technology. Although the conventional platinum (Pt)-buried gate has a high metal work function, which is beneficial for increasing the Schottky barrier height of the E-pHEMT, the high rate of intermixing of the Pt–GaAs interface owing to the effect of the continuous production of on the device influenced the threshold voltage and transconductance at high temperatures or over the long-term operation. Variations in these parameters make Pt-gate E-pHEMT-related circuits impractical. Furthermore, a interlayer produced a serious gate leakage current and unstable Schottky barrier height. This study presents the Ir–GaAs Schottky contact because Ir, buried in GaAs, absorbs surface oxygen atoms, forming after annealing at 200°C. Thermally stable inhibited the overdiffusion of Ir at high temperatures and simultaneously suppressed device flicker noise. The of Ir/Ti/Au Schottky gate E-pHEMT was 0.238 V and this value shifted to 0.244 V after annealing at 200°C. However, the shifted from 0.084 to 0.231 V after annealing of the Pt/Ti/Au Schottky gate E-pHEMT because the Pt sunk into a deeper channel. The slope of the curve of power gain cutoff frequency as a function of temperature was for an Ir/Ti/Au-gate E-pHEMT; it was for a Pt/Ti/Au-gate E-pHEMT. The slight variation in the dc and radio-frequency characteristics of the Ir/Ti/Au-gate E-pHEMT at temperatures from 0 to 150°C revealed that the Ir-GaAs interface has great potential for high power transistors.

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