Abstract
Pulsed NMR measurements of 1H have been employed to study the chemical bonding and diffusion of hydrogen atoms in hydrogenated amorphous silicon (a-Si : H) films at elevated temperatures (20-530°C). The spin-lattice relaxation time T1 is observed to go through a sharp drop above ~400°C. The previously observed low temperature T1 minimum near 30K is essentially unaffected by annealing at temperatures up to ~500°C where over 50% of the hydrogen has evolved.
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