Abstract
In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200°C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz radiation over a wide temperature range from room temperature to 200 °C. A high responsivity Rv of 15.5 and 2.7 kV/W and a low NEP of 0.58 and 10 pW/Hz0.5 were obtained at room temperature and 200 °C, respectively. The advantages of the GaN HEMT over other types of field effect transistors for high temperature terahertz detection are discussed. The physical mechanisms responsible for the temperature dependence of the responsivity and NEP of the GaN HEMT are also analyzed thoroughly.
Highlights
It is demanding to develop terahertz detectors with high sensitivity at elevated temperatures for applications in a harsh environment
We report for the first time a THz detector based on GaN high electron mobility transistor (HEMT) with the ability to work at high temperatures up to 200 °C
A THz detector working up to 200 °C was successfully demonstrated based on a nano-antenna GaN HEMT
Summary
A high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. Field-effect transistor THz detectors hold the advantages of high sensitivity, fast response, ability to operate at room temperature[7]. Schottky diode or FET detectors made of Si, GaAs, or InP have different detection mechanisms and are able to work at room temperature. Si, GaAs, or InP has a relatively narrow band gap (1.12~1.42 eV), and thereby a high intrinsic carrier density that increases exponentially with temperature, which will enlarge the device leakage current and degrade the device performance It is difficult for Si, GaAs, or InP FET terahertz detectors to work at high temperatures. We report for the first time a THz detector based on GaN HEMT with the ability to work at high temperatures up to 200 °C It is the first semiconductor device allowing terahertz detection that can operate at. The mechanisms inside the temperature dependence of the detection responsivity and the noise equivalent power (NEP) are studied
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