Abstract
The automotive semiconductor market is currently valued at around $10 billion worldwide, and is expected to rise to more than $14 billion by 2014. The steep rise of power modules for hybrid and electric vehicles is not yet included in this prognosis. Electronic systems have been the most rapidly growing element of vehicles in recent years, and this trend rise sharply with the introduction of electric vehicles (EVs) and hybrid electric vehicles (HEVs). The key parameters that determine the suitability of a power device for high temperature environment are the devices maximum allowable junction temperature and its conduction loss. The power devices are cooled to an extent that their junction temperatures do not exceed the maximum allowable value. Increasing the maximum junction temperature allows a higher base plate or heat sink temperature. A higher heat sink temperature, allows a higher ambient air temperature or coolant temperature. The semiconductor devices with low conduction loss will generate less heat, and allows a higher heat sink temperature. The paper presents the developments of a novel 400V IGBT based power module well suitable for electric vehicle applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT)
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
