Abstract
The control of adsorption kinetics and post growth treatments yield several stable superstructural phases in heteroepitaxial growth, and are being exploited to form novel nanostructures with controlled shape, size and position assembly. In this paper, we report the study of the interface formation in the sub-monolayer Sb adsorption in UHV on the trenched template of the high index Si (5 5 12) − (2 × 1) reconstructed surface. The interface formation is monitored in-situ by Auger Electron Spectroscopy (AES), Electron Energy Loss Spectroscopy (EELS), and Low Energy Electron Diffraction (LEED). The trenches formed by the (337) and (225) facets separated by primary silicon rows are used to form 1D nanostructures. Performing adsorption, onto substrates held at various temperatures, has enabled us to observe several ordered superstructural phases. Evidence is provided to show that the pathways adopted in the formation of the interface determine the superstructural phases with characteristic electronic properties of this technologically and scientifically important interface.
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