Abstract
This paper presents results of reliability investigation of power VDMOSFETs, encapsulated in both plastic and metal packages, obtained by High Temperature Storage Life (HTSL) and High Temperature Reverse Bias (HTRB) tests. The behaviour of DC parameters (drain current, leakage current, threshold voltage, gain factor, ON-resistance and breakdown voltage) during the reliability testing is monitored and analysed in view of comparison of the effects of the temperature and bias applied on power VDMOSFETs reliability.
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