High temperature stability of chromium boride ohmic contacts to p-type 6H-SiC

Abstract

Ohmic contacts have been fabricated on p-type 6H-SiC using CrB2. Two hundred nanometer thick films were sputter-deposited on substrates of doping concentration 1.3×1019 cm−3 in a system with a base pressure of 3×10−7 Torr. Specific contact resistances were measured using the linear transmission line method, and the physical properties of the contacts were examined using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, and transmission electron microscopy. The as-deposited CrB2 contacts exhibited rectifying characteristics and contained oxygen as a major contaminant. Ohmic behavior with linear current-voltage characteristics was observed following short anneals at 1100°C for 2 min at a pressure of 5×10−7 Torr. The oxygen in the CrB2 films was removed by the annealing process, and the lowest value of the specific contact resistance (rc) measured at room temperature was 8.2×10−5 Ω-cm2. Longer anneals at 1100°C for 3.5 h and 1200°C for 2 h reduced the room temperature values of r to 1.4×10−5 Ω-cm2. A thin reaction region has been identified at the CrB2/SiC interface; however, the interface remains essentially stable. Thermal stressing at 300°C in vacuum for over 2200 h produced only a slight increase in the specific contact resistance. The low value of the specific contact resistance and the excellent high temperature stability of the CrB2/SiC interface make this contact a candidate for high power/high temperature SiC device applications.