Abstract
We investigated the carrier leakage blocking effect of the magnetron sputtered TiO2 film insertion between transparent anodic electrode and porous TiO2 film in the dye-sensitized solar cell (DSC), as a consequence of preventing the ionic short-circuiting of the electrolyte to the anodic electrode through porous TiO2 film. The optimization of the deposition condition of the high temperature TiO2 sputtering for the carrier leakage blocking is reported.
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