Abstract
Single crystals of CrSi2 were obtained in the form of hexagonal prisms by a high-temperature solution growth method using molten tin as a solvent. Their maximum dimensions were approximately 0.3 mm in diameter and 2.5 mm in length. The crystals had hexagonal symmetry with space group P6222 and their lattice parameters were a=0.425(2) nm and c=0.6375(1) nm. The crystals were semiconducting. The value of the micro-Vickers hardness for the {1100} face with hexagonal symmetry was 11.2±0.4 GPa. The weight gain of the crystals heated to 1473 K in air was negligible.
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