Abstract
Abstract In this paper, a compact isolated and self-supplied single channel driver module for operation at 200C (392F) is presented. It is aimed to drive a normally-on GaN device within a high voltage half bridge topology. The driver is implemented on a compact hybrid module. Two of such modules are then assembled on a dedicated half-bridge DBC with two GaN devices.
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More From: Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT)
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