Abstract
N-type and p-type 6H-SiC metal oxide semiconductor (MOS) capacitor samples are fabricated with a typical method, and the high frequency capacitor voltage (C-V) curves of these samples are measured at temperatures ranging from 293 to 533 K. There exists huge difference between the n-type and p-type samples. Flat-band voltage shift of the n-type sample becomes larger with temperature rising, but that of the p-type sample have very little change. This may be caused by the residual Al in the p-type oxide. Both types of the SiC samples follow the same rule of flat-band voltage changing with temperature. But their mechanisms are different as temperature is above 453 K. Of both types the p-type SiC is more suitable for high temperature applications.
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