Abstract
AstractWe fabricated B-doped p-BaSi2/n-Si heterojunction solar cells by molecular beam epitaxy, and performed post-annealing at 1000 °C in an Ar atmosphere for various annealing durations (t a) in the range 15–300 s. At t a = 15 s, the conversion efficiency (η) under AM 1.5 G illumination was degraded unexpectedly from η = 1.96% for the as-grown sample to η = 0.8%. At t a ≥ 30 s, improvement of the open-circuit voltage (V OC) was obtained. V OC was increased from 0.28 V for the as-grown sample to 0.45 V at t a = 30 s, and the η reached 5.1%. Deep level transient spectroscopy measurement indicated the presence of hole traps coming from point defects near the BaSi2/Si interface. The surface morphology remained almost unchanged at t a ≤ 60 s. However, part of the surface peeled off at t a ≥ 120 s when we separated the attached samples from each other.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.