Abstract
Amorphous SiC:H (a‐SiC:H) diode structures with different ratios of Si:C are deposited on transparent conductive boron‐doped diamond‐coated fused silica substrates by plasma‐enhanced chemical vapor deposition. The boron‐doped diamond thin films have been deposited at temperature 720 °C on the fused silica substrates with a Ti grid used to enhance electrical conductivity. The thin‐film structures based on P‐type, Intrinsic and N‐type a‐SiC:H thin films, shortly a‐SiC:H PIN diodes, are characterized by current–voltage measurements under solar simulator illumination. For comparison, the same PIN structures are deposited on fluorine‐doped tin oxide. Before deposition of the diode structures, the surface morphology is studied by scanning electron microscopy, and undoped layers deposited on the quartz substrates are characterized by temperature‐resolved electrical resistivity, optical absorptance, Raman spectroscopy, and photoluminescence.
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