High-temperature oxidation resistance behavior and mechanism of HfSiO4-modified C/SiC composites

Abstract

To enhance the oxidation resistance of C/SiC composites, HfSiO4 was introduced into C/SiC composites to modify the matrix utilizing two cyclic alternating preparation modes, thereby yielding the C/SiC-HfSiO4 composites with a composite matrix. Using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), energy-dispersive spectrometer (EDS), and thermogravimetric-differential thermal analysis (TG-DTA), a comprehensive investigation was conducted into the oxidation behavior and mechanism of the prepared composites. Results reveal that the C/SiC-HfSiO4 composites prepared using cyclic alternating preparation modes display the reduced oxidation mass loss and enhanced retention of flexural strength, despite of having higher porosity. In short, the introducing of HfSiO4 can effectively improve the oxidation resistance of C/SiC composites. The effects of the matrix particle refinement and the synergy between the HfSiO4 and SiO2 jointly lead to the enhanced oxidation resistance.