Abstract
Oxidation behaviors of bulk SiC at 1000–1400 °C in Ar-20 vol% H2O-10 vol% air were investigated. The thickness of the passivation oxide layer showed a parabolic increase with time. Dense and uniform layers formed below 1200 °C, whereas pores and cracks were observed at higher temperatures. An analytical model was proposed to estimate the oxide layer growth and SiC mass loss rate. The SiC layer should be effective in retaining the fission products after oxidation by excessive water and air. This work is the first detailed study of SiC layer oxidation during loss of coolant accidents (LOCA) for HTGRs.
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