Abstract
The oxidation behavior of Ti 3SiC 2-based material in air has been studied from 900°C to 1200°C. The present work showed that the growth of the oxide scale on Ti 3SiC 2-based material obeyed a parabolic law from 900°C to 1100°C, while at 1200°C it followed a linear rule. The oxide scale was generally composed of an outer layer of coarse-grained TiO 2 (rutile) and an inner layer of fine-grained TiO 2 and SiO 2 (tridymite) above 1000°C. A discontinuous coarse-grained SiO 2 layer was observed within the outer coarse-grained TiO 2 layer on the samples oxidized at 1100°C and 1200°C. Marker experiments showed that the oxidation process was controlled by the inward diffusion of oxygen, outward diffusion of titanium and CO or SiO, and that internal oxidation predominated. The TiC content in Ti 3SiC 2 was deleterious to the oxidation resistance of Ti 3SiC 2.
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