Abstract

InAs/AlSb quantum cascade lasers emitting at 3.06 and 3.22 μm at room temperature has been studied. The lasers with high reflection coating on back facets operated in pulse mode up to 400 and 423 K, respectively. The obtained results showed no dramatic performance degradation of the InAs-based QCLs with decreasing emission wavelength down to 3 μm.

Highlights

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  • 4 μm performances of these InP-based Quantum cascade lasers (QCL) degrade with decreasing emission wavelength because the conduction band offset between the GaInAs wells and AlInAs barriers is insufficient to host intersubband transitions of such high energies

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Summary

Introduction

HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. High temperature operation of short wavelength InAs-based quantum cascade lasers.

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