Abstract
High-power and high-reliable operation of transverse-mode stabilized InGaAlP laser diodes has been achieved by a selectively buried ridge waveguide structure with a thin (0.02 μm) active layer. A composition-shifted In0.5+δGa0.5−δP active layer was employed in order to improve the temperature characteristic. A maximum cw light output power of 54 mW was obtained for the laser with antireflection and high-reflection coatings. A high-power cw operation above 30 mW output power was maintained even at a 60 °C heat-sink temperature. Stable cw operation exceeding 1000 h has been achieved for 20 mW output power at 50 °C.
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