Abstract
Electrical injection lasers emitting in the 1.3 μm wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn)As type-II double “W”-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broad-area edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 μm long laser bar in the temperature range between 10 °C and 100 °C. The device exhibits a differential efficiency of 41 % and a threshold current density of 1.0 kA/cm2 at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T0 = (132 ± 3) K over the whole temperature range and T1 = (159 ± 13) K between 10 °C and 70 °C and T1 = (40 ± 1) K between 80 °C and 100 °C.
Highlights
The suggested structures were fabricated using MOVPE and their characterization yielded room temperature laser operation based on the fundamental type-II transition at 1.275 μm
The temperature-dependent characterization of the device yielded operation based on the fundamental type-II transition up to a temperature of 100 °C as well as characteristic temperatures of T0 = (132 ± 3) K over the whole temperature range and T1 = (159 ± 13) K between 10 °C and 70 °C and T1 = (40 ± 1) K between 80 °C and 100 °C
These results indicate that the (GaIn)As/Ga(AsSb)/(GaIn)As materials system grown on GaAs substrate is a promising candidate for efficient and temperature-stable telecommunication lasers emitting at 1.3 μm
Summary
The careful optimization of (GaIn)As/Ga(AsSb)/(GaIn)As “W”-QWHs for emission at 1.3 μm using a fully microscopic theory resulted in an improvement of the material gain values by 66 % compared to previous designs. The suggested structures were fabricated using MOVPE and their characterization yielded room temperature laser operation based on the fundamental type-II transition at 1.275 μm.
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