Abstract
The performance characteristics of epitaxial structures suitable for optoelectronic and electronic devices were investigated. These were fabricated by MOVPE using tertiary-butylarsine, a non-hydride arsenic source. Minority carrier diffusion lengths of 5μm at 3 × 1018/cm3 and 2μm at 2 × 1019/cm3 were achieved inp-type GaAs. Recombination velocities at the GaAs/AlGaAs interface are reduced to 1 × 103 cm/sec by processing under appropriate conditions. Electron mobilities of 4000 cm2/V-sec inn-type (2 × 1017/cm3) layers resulted in transconductances of 120 mS/mm in 1.5μm gate depletion mode MESFETs. The above values are comparable to those obtained with arsine in this work and others reported in the literature.
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