Abstract
Micromachined thermal heater platforms offer low electrical power consumptionand high modulation speed, i.e. properties which are advantageous for realizing non-dispersive infrared (NDIR) gas- and liquid monitoring systems. In this paper, we report oninvestigations on silicon-on-insulator (SOI) based infrared (IR) emitter devices heated byemploying different kinds of metallic and semiconductor heater materials. Our resultsclearly reveal the superior high-temperature performance of semiconductor over metallicheater materials. Long-term stable emitter operation in the vicinity of 1300 K could beattained using heavily antimony-doped tin dioxide (SnO2:Sb) heater elements.
Highlights
Silicon micro-heaters have been a subject of intense research within the past decade
For this reason our hotplates do not conform to the low power consumption values of our previously designed hotplates where we aimed at gas sensing applications [4]
Semiconductor heater materials proved to be clearly superior in performance with regard to metallic ones
Summary
Silicon micro-heaters have been a subject of intense research within the past decade. High thermal conductivity is not compatible with low electrical power consumption For this latter reason, closed membrane designs cannot be used; hotplate structures rather need to be introduced to limit the cross sectional area of the heat conduction paths from the heated hotplate towards the supporting silicon substrate (Fig. 1). A maximum conductivity in fully annealed films of about 4500 μΩcm was obtained by employing Sb admixtures on the order of 5% by weight The structuring of such layers was performed by lift-off prior to the SnO2:Sb annealing step using a pre-patterned mask of photo resist. 5000 μm 2000 μm 1500 μm 350 μm 150 μm 6 μm 12000 μm x 100 μm x 0.4 μm 6 x 2000 μm x 250 μm x 0.95 μm a) b)
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