Abstract
The influence of implantation temperature on the resistivity of aluminum implanted 4H‐silicon carbide was determined. A dose of 1.2 ⋅ 1015 cm−2 aluminum ions was implanted at temperatures between room temperature and 1000°C. A decrease of resistivity down to 0.35Ωcm was found with increasing implantation temperature. The influence of implantation temperature on resistivity was identified by modeling temperature dependent resistivity data. The results showed an increase of mobility due to the lowering of compensating centers.
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