High Temperature Hot Electron Transport in 6H- and 3C-SiC

Abstract

The electron drift velocity and electron temperature in 6H- and 3C-SiC at 300, 673 and 1073 K ambient temperature have been calculated by using a hydrodynamic balance equation method. Our results show that the drift velocity versus electric field relation in 3C-SiC at 300 K is in good agreement with a previous Monte Carlo simulation. A gentle peak of drift velocity appears at high electric field. The velocity–field relation in 6H-SiC at 300 K agrees with the experimental data up to 500 kV/cm. At higher electric field, however, the drift velocity decreases.