Abstract
In this contribution we report on the preparation of high temperature Hall sensors (HTHS). The maximum working temperature of the sensors is not less than 573 K (300 °C). The HTHS active element is a heavily n-doped InSb layer epitaxially grown on GaAs. The InSb layer is protected from the hot ambient by a 0.1 μm SiO x layer ( x ≤ 2). The magnetic sensitivity of the sensors is 0.1 V/(A T), its temperature coefficient is 0.02 %/K or less. The HTHS can also be used in the cryogenic temperature range without loosing their basic properties and advantages. Thus, the temperature range of the sensors applicability is unusually broad.
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