High-temperature growth of thick AlN layers on sapphire (0 0 0 1) substrates by solid source halide vapor-phase epitaxy

Abstract

High-temperature growth of thick AlN layers was performed by solid source halide vapor-phase epitaxy (HVPE) with local heating system. It was found that crystalline quality of AlN layers grown on sapphire (0 0 0 1) substrates improved with increase of growth temperature until 1500 °C. Degradation of crystalline quality occurred over 1550 °C, which is thought to be due to the decomposition of AlN crystal or sapphire substrate during the epitaxial growth. The full-width at half-maximum (FWHM) values of (0 0 0 2) and ( 1 0 1 ¯ 0 ) diffraction from the AlN layer grown at 1500 °C were 103 and 828 arcsec, respectively. Secondary ion mass spectrometry (SIMS) measurement showed a high concentration of oxygen incorporated into the AlN layer through the interface between sapphire and AlN at 1550 °C. The near band-edge emission peaking at 208.2 nm was also observed by cathodoluminescence measurement at room temperature.