Abstract
AbstractWe report on the growth of high quality AlN films on sapphire by MOVPE in an AIX2400G3‐HT planetary reactor. Specific reactor hardware modifications were conducted to facilitate growth temperatures of up to 1600 °C and to obtain reduced parasitic gas phase reactions. Growth was optimized regarding growth rate and surface morphology as well as optical and structural properties of the AlN layers on sapphire. With increasing growth temperature we observe a transition from an AlN surface with a high density of large pits to a smooth pit‐free morphology. The improvement in material quality with growth temperature is confirmed by X‐ray diffraction, AFM, SIMS and Raman measurements. The impact of residual or intentionally introduced Ga during growth on AlN material properties is discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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