High temperature field effect hydrogen and hydrocarbon gas sensors based on SiC MOS devices

Abstract

The growing need for reliable, efficient, high temperature hydrogen and hydrocarbon monitoring has fueled research into novel structures for gas sensing. Metal oxide semiconductor (MOS) devices employing a catalytic metal layer have emerged as one of the leading sensing platforms for such applications, owing to their high sensitivity and inherent capability for signal amplification. The limited operating temperature of such devices employing silicon as the semiconductor has led research efforts to focus on replacing them with devices based on silicon carbide (SiC). More recently, MOS devices having different oxide layers exhibiting improved sensing performance have emerged. Considering the amount of research that has been carried out in this area in recent times, it is important to elucidate the new findings and the gas interaction mechanisms that have been ascribed to such devices, and bring together several theories proposed by different research groups. In this paper we first highlight the needs which have driven research into SiC based field effect hydrogen and hydrocarbon sensors, illustrate the various structures being investigated, and describe the device evolution and current status. We provide several sensing examples of devices that make use of different oxide layers and demonstrate how their electrical properties change in the presence of the gases, as well as presenting the hydrogen gas interaction mechanisms of these sensors.