Abstract
Photoluminescence (PL) spectra of GaAs quantum wells embedded in short-period AlAs/GaAs superlattices have been measured at 2 K and at room temperature. Two approaches have been applied in order to investigate the mechanisms of radiative recombination in these structures. In the first one, we studied the excitation density dependence of the PL intensity. In the second approach a line-shape analysis of the PL spectra is performed by means of a statistical model, which includes both free exciton, and free carrier recombinations. The fit based on this model reproduces with high accuracy the experimental spectra and allows to assess the relative contributions of excitons and free carriers to the radiative recombination process. The results of both approaches indicate the predominance of free excitons in the radiative recombination at room temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
