Abstract
The lasing characteristics of randomly assembled SnO2 nanowires, whose excitonic gain is attributed to the exciton states bounded to the surface defects, are studied from room temperature up to 500 K. It is found that the amount of excited carriers under the lasing conditions is well below the Mott density of SnO2 so that high pumping intensities have less influence on the radiative recombination mechanism and wavelength of the lasing peaks. Furthermore, the redshift of lasing peaks is mainly due to the reduction of bandgap energy of SnO2 with the increase of temperature.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
