Abstract

Yb-doped ITO (ITO:Yb) films were deposited on unheated non-alkali glass substrates by magnetron cosputtering using two cathodes (DC, RF) equipped with the ITO and <TEX>$Yb_2O_3$</TEX> target, respectively. The composition of the ITO:Yb films was controlled by adjusting the RF powers from 0 W to 480 W in 120 W steps with the DC power fixed at 70 W. The ITO:Yb films had a higher crystallization temperature (<TEX>$200^{\circ}C$</TEX>) than that of the ITO films (<TEX>$170^{\circ}C$</TEX>), which was attributed to both larger ionic radius of <TEX>$Yb^{3+}$</TEX> and higher bond enthalpy of <TEX>$Yb_2O_3$</TEX>, compared to ITO. This amorphous ITO:Yb film post-annealed at <TEX>$170^{\circ}C$</TEX> showed a resistivity of <TEX>$5.52{\times}10^{-4}{\Omega}cm$</TEX>, indicating that a introduction of Yb increased resistivity of the ITO film. However, these amorphous ITO:Yb films showed a high etching rate, fine pattering property, and a very smooth surface morphology above the crystallization temperature of the amorphous ITO films (about <TEX>$170^{\circ}C$</TEX>). The transmittance of all films was >80% in the visible region.

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