High temperature dismantling of Si atomic lines on β-SiC(100)

Abstract

We use high-temperature scanning tunneling microscopy (STM) to investigate the temperature-induced Si atomic line dynamics on the β-SiC(100) surface. These atomic lines are imaged up to 1200K (probably the highest temperature STM imaging) and break at slightly higher temperatures. Their dismantling results from individual and collective atomic mechanisms including (i) one-by-one dimer removal, (ii) lateral motion of Si atomic lines and (iii) global surface migration of Si atoms resulting in two-dimensional island formation and melting at 1225K. Overall, the results suggest that Si is thermally removed primarily at step edges.