Abstract
Ti3SiC2 filler has been introduced into SiCf/SiC composites by precursor infiltration and pyrolysis (PIP) process to optimize the dielectric properties for electromagnetic interference (EMI) shielding applications in the temperatures of 25–600°C at 8.2–12.4GHz. Results indicate that the flexural strength of SiCf/SiC composites is improved from 217MPa to 295MPa after incorporating the filler. Both the complex permittivity and tanδ of the composites show obvious temperature-dependent behavior and increase with the increasing temperatures. The absorption, reflection and total shielding effectiveness of the composites with Ti3SiC2 filler are enhanced from 13dB, 7dB and 20dB to 24dB, 21dB and 45dB respectively with the temperatures increase from 25°C to 600°C. The mechanisms for the corresponding enhancements are also proposed. The superior absorption shielding effectiveness is the dominant EMI shielding mechanism. The optimized EMI shielding properties suggest their potentials for the future shielding applications at temperatures from 25°C to 600°C.
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