Abstract
The temperature stability and high temperature characteristics of GaAs FETs on CVD diamond heat sinks were investigated by modeling the high-temperature electrical characteristics for GaAs MESFETs and by experimentally measuring the elevated-temperature performance. The bias region for the zero temperature coefficient (ZTC) was determined. The thermal characteristics were determined by infrared microscopy and the results were correlated with a finite element analysis calculation of the GaAs FET thermal distribution. The utilization of CVD diamond as a heat spreading substrate is shown to reduce the peak channel temperature by 30 percent when the FET is biased at the 1 dB compression point.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
