Abstract
The imprint and switching behaviors at high temperature have been systematically investigated through the study on the poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) films without and with in-situ synthesized poly(3,4-ethylene dioxythiophene)-poly(styrene sulfonic) acid, poly(vinyl phosphonic) acid (PVPA), and copper-phthalocyanine as interlayers. The lower imprint rate and the faster switching speed are observed for the sample with PVPA as interlayer even after 107 cycles at 60 °C. Combined with the results for the imprint and switching behaviors at room temperature, the temperature-dependent imprint and switching mechanisms for different electroactive interlayers in this system are proposed. Therefore, the optimum protocol could be designed for FeRAM based on P(VDF-TrFE) film, which would be in favor of the performance and the service life of the related ferroelectric devices even at high temperature.
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