Abstract
AbstractThe defect structure of donor‐doped Te‐rich CdTe is studied theoretically within quasi‐chemical formalism and experimentally in heavily In‐doped CdTe by in situ high temperature galvanomagnetic measurements in the temperature interval 900–200 °C. The experimental data are evaluated within defect model optimized to recent high temperature experiments and assuming doping‐induced band gap renormalization. We show that a proper thermal treatment can be conveniently used for the optimization of room temperature electric properties and for a preparation of the semi‐insulating detector grade material with a deep level doping below the limit 1013 cm–3 demanded in the detector industry. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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