Abstract
Two high temperature CVD techniques, respectively optimised for epitaxial and crystal growth, are presented. A chimney reactor has been developed for fast epitaxy, carried out at 1700–1900°C, with growth rates ranging from 10 to 25 μm h −1, and a material quality close to conventional CVD processes. The growth of 4H-SiC epilayers with low n-type doping (10 14–10 15 cm −3) and carrier lifetimes up to ∼0.4 μs is described, while the feasibility of high voltage Schottky rectifiers (1.8 kV) is demonstrated. On the other side, developments of the stagnant flow HTCVD process, where growth is carried out at 2000–2300°C, are shown to enable growth rates ranging from 0.3 up to 0.8 mm h −1. The main characteristics of HTCVD grown SiC crystals (up to nearly 7 mm thick) are described.
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