Abstract
This paper focuses on the comparison of various advanced substrates such as trap-rich (TR), porous silicon (PSi), gold-doped (Au-Si) and smart-implants PN-junction (DP) in terms of RF performances. Both small-and large-signal measurements were performed, including the study of the influence of temperature and DC bias voltage. The purpose of this paper is to provide an overview, and a more in-depth analysis of DP substrate, of the characteristics of these multiple substrates to facilitate design choices for RF-IC applications.
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