Abstract
Based on the material characteristics and the operational principle of the double base epilayer BJTs, and according to the drift-diffusion and the carrier recombination theory, the common emitter current gain is calculated considering four recombination processes. Then its performance is analyzed under high temperature conditions. The results show that the emitter injection efficiency decreases due to an increase in the base ionization rate with increasing temperature. Meanwhile, the SiC/SiO2 interface states and the quality of the passivation layer will affect the surface recombination velocity, and make an obvious current gain fall-off at a high collector current.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
