High temperature characteristics of doped channel AlGaN/GaN MIS‐HFETs with thin AlGaN barrier layer

Abstract

AbstractThe device performance of AlGaN/GaN‐based metal‐insulator‐semiconductor heterostructure field effect transistors (MIS‐HFETs) with a very thin AlGaN barrier and a heavily doped GaN channel for high 2DEG density has been investigated at elevated temperatures up to 250 °C. The devices exhibited ultra‐low gate current leakages under the reverse gate bias with very reasonable transconductance characteristics at both RT and high temperatures. MIS‐HFETs with doped channel showed much higher saturation drain current and weaker current collapse than the conventional devices at RT and high temperatures. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)