High-temperature characterisation and analysis of leakage-current-compensated, low-power bandgap temperature\xa0sensors

Abstract

This paper analyses leakage current compensation techniques for low-power, bandgap temperature sensors. Experiments are conducted for circuits that compensate for collector-substrate, collector-base, body-drain and source-body leakage currents in a Brokaw bandgap sensor. The sensors are characterised and their failure modes are analysed at temperatures from 60 to 230^{,circ }hbox {C}. It is found that the most appropriate compensation circuit depends on the accuracy requirements of the application and on whether a stable reference voltage is required by other parts of the circuit. Experiments show that the power consumption is dominated by leakage current at high temperatures. One type of sensor was seen to consume 260 nW at 60 ^{,circ }hbox {C}, 2.1, upmu hbox {W} at 200^{,circ }hbox {C} and 14, upmu hbox {W} at 230^{,circ }hbox {C}. This work is motivated by the need to accurately monitor the temperature of power semiconductors in order to predict emerging faults in power semiconductor modules, a task for which cheap, single-chip, low-power, high-temperature, wireless bandgap temperature sensors are appropriate.