High Temperature Atomic Layer Deposition of Ruthenium from N , N-Dimethyl-1-ruthenocenylethylamine

Abstract

Ruthenium thin films were grown by atomic layer deposition from -dimethyl-1-ruthenocenylethylamine precursor. The growth was examined in the substrate temperature range of . The growth rate increased with the substrate temperature but was quite stable between 400 and . The films typically consisted of polycrystalline hexagonal ruthenium metal with a resistivity in the range of when the film thickness was 10 nm and above. A resistivity of could be achieved in the film as thin as 4 nm. Measurements on metal-insulator-metal (MIM) capacitors with Ru films as metal electrodes revealed a capacitive voltage behavior typical of MIM structures and appreciably high breakdown voltages.