Abstract
Abstract A study including core level photoelectron spectroscopy and photoelectron diffraction was performed in order to obtain information on the high-temperature arsenic adsorption on the InP(110) surface. Surface bonding, surface structure and interface reactions were investigated in comparison to InP(110). An arsenic–phosphorus exchange reaction replacing the first layer phosphorus atoms by arsenic and forming a monolayer of InAs was observed using photoelectron spectroscopy. A polar angle scanned photoelectron diffraction study was performed in order to obtain structural information on this arsenic-exchanged surface. Comparison of simulations with experimental angle distribution curves applying double scattering calculations supports a bond angle rotation of this surface with a tilt angle of ω=29°.
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